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Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, typical values are at V CC = +3.3V, P RF = -5dBm, P LO = 0dBm, f RF = 3550MHz, f LO = 3200MHz,
f IF = 350MHz, T C = +25°C, unless otherwise noted.) (Note 8)
PARAMETER
IF Output Impedance
SYMBOL
Z IF
CONDITIONS
Nominal differential impedance at the IC’s
IF outputs
MIN
TYP
200
MAX
UNITS
?
RF terminated into 50 ? , LO driven by a 50 ?
IF Output Return Loss
source, IF transformed to 50 ? using
external components shown in the Typical
19
dB
Application Circuit
RF-to-IF Isolation
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
RFMAIN (RFDIV) converted power measured
28
-36
-34
-27
dB
dBm
dBm
dBm
Channel Isolation
at IFDIV (IFMAIN), relative to IFMAIN (IFDIV),
38.5
dB
all unused ports terminated to 50 ?
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Not production tested.
Guaranteed by design and characterization.
Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating
Characteristics section.
All limits reflect losses of external components, including a 0.9dB loss at f IF = 350MHz due to the 4:1 impedance trans-
former. Output measurements were taken at IF outputs of the Typical Application Circuit.
100% production tested for functional performance.
Note 10: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50 Ω source.
Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
_______________________________________________________________________________________
5
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